Crystal IS

A recent Compound Semiconductor Magazine & CS International Conference article highlights record forward-current performance in AlGaN Schottky barrier diodes built on bulk AlN substrates, further validating the advantages of this UWBG material platform for advanced power electronics. As research continues to advance, bulk AlN is demonstrating its value through strong thermal performance, support for high-Al-content epitaxy, and the ability to enable next-generation high-voltage devices. Exciting to see continued momentum behind AlN-based technology. Read more 🔗 https://lnkd.in/gwAPKr8x

Cornell researchers have unlocked the potential of Aluminum Nitride (AlN) for high-performance transistors, paving the way for faster, more efficient RF electronics. This breakthrough promises transformative applications in 5G, satellite communications, and defense systems—where speed and reliability are critical. Discover how AlN is redefining the future of semiconductor technology and why it matters for next-generation wireless infrastructure.

The AI revolution isn't just driving demand for more compute. It's driving demand for a new generation of power infrastructure. As the industry moves toward higher-power, higher-voltage architectures, efficient power delivery is becoming just as critical as compute performance. That's where ultra-wide bandgap materials like aluminum nitride (AlN) come in. With the potential for higher-voltage operation, lower power losses, and improved thermal performance, AlN could help enable the next generation of AI data center power systems. Take a closer look at the trends driving this shift in our recent article: 🔗 https://lnkd.in/gq6Zc6pe #AI #DataCenters #PowerElectronics

Excited to see this article recognized as an Editor’s Pick in AIP Publishing! 🔗 https://lnkd.in/eQTt2VZC This work highlights wafer-scale characterization of bulk AlN, offering an initial look at wafer-to-wafer behavior, where the team observed encouraging consistency in surface morphology, roughness, optical properties, and crystal metrics. This is significant because wafer-to-wafer uniformity is essential for scalable manufacturing and reliable device performance—a critical step forward for UWBG technologies. The study also demonstrates 1 µm homoepitaxial AlN growth with low roughness, enabling further thick epitaxy and supporting high-voltage device development. Although challenges remain (including dislocation density, offcut uniformity, and crystal bow), this work represents a meaningful step toward building the materials foundation for next-generation AlN-based UWBG devices. #Semiconductors #MaterialsScience #UWBGSemiconductors #PowerElectronics #Innovation

Exciting progress for GaN-on-AlN! 📣 A recent article in Compound Semiconductor Magazine & CS International Conference outlined a study that demonstrates that GaN-on-AlN HEMTs grown with hot-wall MOCVD show ~20% lower hotspot temperatures compared to GaN-on-SiC — a major step forward in thermal management and reliability. At Crystal IS, we’ve long believed in the potential of AlN substrates to unlock higher performance in RF and power devices. The results from this study are a first step in understanding the advantage that AlN can bring to these applications. Read more here > https://lnkd.in/eU3u6Z9t

Solid-state devices which emit UVC wavelengths have the potential to transform applications from sensing to disinfection. And aluminum nitride (AlN) plays a key role in enabling this space for future large-scale applications. Its wide bandgap makes it uniquely suited for: - Deep UV emission - Improved device reliability - Handling demanding thermal and operating conditions Advancing UVC technologies requires more than adapting legacy materials - innovating with AlN substrates can enable high density arrays to address industrial applications for sensing and disinfection. 📖 Learn how AlN enables UVC: https://lnkd.in/eYqgVnP9 #UVC #AlN #Optoelectronics #Semiconductors #MaterialsInnovation